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RF051VA2S
Diodes
Fast recovery diode
RF051VA2S
Applications High speed switching Features 1) Small mold type (TUMD2) 2) Ultra high switching speed 3) High reliability. Dimensions (Unit : mm)
0.170.1 0.05 1.30.05
Land size figure (Unit : mm)
1.1
1.90.1
2.50.2
Constructure Silicon epitaxial planar
0.80.05
TUMD2
Constructure
ROHM : TUMD2 0.1 dot (year week factory) + day
0.60.2
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.750.1 1.550.1 0 0.250.05
3.50.05
8.00.2
1.430.05
4.00.1
1.00.2 0
2.75
2.80.05
0.90.08
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr
Symbol VRM VR Io IFSM Tj Tstg
Limits 200 200 0.5 5 150 -55 to +150
Unit V V A A
Min. -
Typ. -
Max. 0.98 10 25
Unit V A ns
Conditions IF=0.5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR
0.8 0.5
2.0
1/3
RF051VA2S
Diodes
Electrical characteristic curves
1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 100 10 1 0.1 0.01 Ta=25 Ta=125 Ta=150 Ta=75 Ta=-25 1000000 100000 10000 1000 100 10 1 0 200 400 600 800 1000 0 50 100 150 200 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=-25 Ta=75 Ta=25 Ta=125 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=150
10
1
0.001
0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
890
1000 REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=0.5A n=30pcs 900 800 700 600 500 400 300 200 100 0 VF DISPERSION MAP IR DISPERSION MAP AVE:516.3nA Ta=25 VR=200V n=30pcs
10 9 8 7 6 5 4 3 2 1 0 Ct DISPERSION MAP ave=3.68pF AVE:3.13pF Ta=25 f=1MHz f=1MHz VR=0V VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
880
870
860
850
AVE:861.0mV
840
50
30 RESERVE RECOVERY TIME:trr(us) 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE8.6ns
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
100
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
45 40 35 30 25 20 15 10 5 0
Ifsm 10 8.3ms 8.3ms 1cyc
Ifsm
1cyc 8.3ms
1
AVE:6.50A
0.1 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
Mounted on epoxy board
1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
IM=1mA 1ms tim IF=10mA
1
DC D=1/2
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm
10
0.8
300us
t
FORWARD POWER DISSIPATION:Pf(W)
Rth(j-a)
0.6
100
Sin(180)
0.4
1
Rth(j-c)
0.2
0.1 1 10 100
TIME:t(ms) IFSM-t CHARACTERISTICS
10 0.01
0
0.1
1 10 100 TIME:t(s) Rth-t CHARACTERISTICS
1000
0
0.5
1
AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2/3
RF051VA2S
Diodes
0.1
1.5
1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io t T VR D=t/T VR=100V Tj=150 0A 0V 1 Io t T VR D=t/T VR=100V Tj=150
AVERAGE RECTIFIDE FORWARD CURRENT:Io(A)
0.08 REVERSE POWER DISSIPATION:PR (W)
0.06
1
DC D=1/2 Sin(180)
DC D=1/2
DC D=1/2
0.04
0.5
0.5 Sin(180) 0
0.02
Sin(180)
0
0 0 50 100 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 200
0
25
50
75
100
125
150
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 15 AVE:7.70kV 10 5 0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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